Fabrication and characterization of high performance sub-millimetric InGaP/InGaAs/Ge solar cells
Abstract
Micro-Concentrator photovoltaics modules promise to overcome the limitations of CPV such as thermal losses or resistive losses. Miniaturization involves new challenges in the field of cells fabrication, particularly the management of perimeter recombinations. In this paper, sub-millimetric InGaP/InGaAs/Ge solar cells with high performances are fabricated. We report record open circuit voltage of 2.39 V and 2.28 V for cells with mesa area of 0.25 mm 2 and 0.04 mm 2 respectively, indicating excellent sidewall passivation. Individual assessment of sub-cells non-radiative losses indicates that the top cell is the most impacted by perimeter recombinations.
| Origin | Publication funded by an institution |
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