Surface space charge effects in planar submicrometer GaAs and InP devices - Université de Lyon
Journal Articles IEEE Transactions on Electron Devices Year : 1987

Surface space charge effects in planar submicrometer GaAs and InP devices

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Micro and nanotechnologies/Microelectronics Engineering Sciences [physics]

Catherine BRU CHEVALLIER  : Connect in order to contact the contributor

https://udl.hal.science/hal-01977000

Submitted on : Thursday, January 10, 2019-2:42:57 PM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

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hal-01977000 , version 1 (10-01-2019)

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  • HAL Id : hal-01977000 , version 1

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C. Bru-Chevallier, Patrice de Carné, P. Dansas, Daniel Pascal, Michel Rousseau, et al.. Surface space charge effects in planar submicrometer GaAs and InP devices. IEEE Transactions on Electron Devices, 1987, ED34 (8), pp.1611-1616. ⟨hal-01977000⟩

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CNRS UNIV-VALENCIENNES UNIV-LYON1 INSA-LYON EC-LYON IEMN INL UNIV-PARIS-SACLAY UNIV-LILLE INSA-GROUPE UDL EC_LYON_STRICT
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