Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures - Université de Lyon
Journal Articles Journal of Applied Physics Year : 1990

Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures

Domains

Materials Engineering Sciences [physics]

Catherine BRU CHEVALLIER  : Connect in order to contact the contributor

https://udl.hal.science/hal-01977062

Submitted on : Thursday, January 10, 2019-3:04:29 PM

Last modification on : Wednesday, January 24, 2024-9:54:18 AM

No file

Dates and versions

hal-01977062 , version 1 (10-01-2019)

Identifiers

  • HAL Id : hal-01977062 , version 1

Cite

Pierre Dansas, Daniel Pascal, C. Bru-Chevallier, S. Laval, L. Giraudet, et al.. Interfacial traps in Ga 0.47 In 0.53 As/InP heterostructures. Journal of Applied Physics, 1990, 67 (3), pp.1384-1388. ⟨hal-01977062⟩

Export

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

CNRS UNIV-VALENCIENNES UNIV-LYON1 INSA-LYON EC-LYON IEMN INL UNIV-PARIS-SACLAY UNIV-LILLE INSA-GROUPE UDL EC_LYON_STRICT
48 View
0 Download

Share

More